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| (R) STTH106 TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s s 1A 600 V 175 C 1.25 V 25 ns s s Ultrafast switching Low reverse recovery current Reduces switching & conduction losses Low thermal resistance DO-41 STTH106 DESCRIPTION The STTH106, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, inverters and as a free wheeling diode. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Tl = 100C tp = 10 ms =0.5 Sinusoidal Value 600 6 1 25 - 65 + 175 + 175 Unit V A A A C C November 2001 - Ed: 2A 1/5 STTH106 THERMAL PARAMETERS Symbol Rth (j-l) Rth (j-a) Junction to lead Junction to ambient Parameter Maximum 45 110 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 600V Tj = 25C Tj = 150C IF = 1 A Tj = 25C Tj = 150C To evaluate the maximum conduction losses use the following equation : P = 1.03 x IF(AV) + 0.27 IF2(RMS) 1.0 10 Min. Typ. Max. 1 75 1.7 1.25 V Unit A VF DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 1 A dIF/dt = - 50 A/s VR = 30V tfr VFP IF = 1 A dIF/dt = 100 A/s VFR = 1.1 x VFmax Tj = 25C Tj = 25C 30 Min. Typ. Max. 25 45 100 10 ns V Unit ns 2/5 STTH106 Fig. 1: Conduction losses versus average current. P(W) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 T Fig. 2: Forward voltage drop versus forward current. IFM(A) 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 = 0.05 = 0.1 = 0.2 = 0.5 Tj=150C (Maximum values) Tj=25C (Maximum values) =1 Tj=150C (Typical values) IF(av)(A) =tp/T tp VFM(V) 1 2 3 4 5 Fig. 3: Relative variation of thermal impedance junction ambient versus pulse duration (epoxy FR4, Leads = 10mm) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 9 8 7 IF=IF(av) VR=400V Tj=125C IF=2 x IF(av) 6 5 4 IF=0.25 x IF(av) IF=0.5 x IF(av) 0.4 0.3 0.2 0.1 Single pulse 3 = 0.2 = 0.1 T 2 1 tp(s) 1.E+01 0.0 1.E-01 1.E+00 =tp/T 1.E+02 tp dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 0 1.E+03 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 50 100 150 200 250 300 350 400 450 500 IF=2 x IF(av) VR=400V Tj=125C Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 250 225 200 VR=400V Tj=125C IF=2 x IF(av) IF=IF(av) IF=0.5 x IF(av) 175 150 IF=IF(av) 125 100 75 50 IF=0.5 x IF(av) dIF/dt(A/s) 25 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 3/5 STTH106 Fig. 7: Softness factor versus dIF/dt (typical values). S factor 6 IF=IF(av) VR=400V Tj=125C Fig. 8: Relative variation of dynamic parameters versus junction temperature. 1.0 0.9 0.8 IRM S factor 5 0.7 4 0.6 Qrr 3 0.5 0.4 2 0.3 0.2 IF=IF(av) VR=400V Reference: Tj=125C 1 0.1 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 Tj(C) 25 50 75 100 0.0 125 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFp(V) 25 IF=IF(av) Tj=125C Fig. 10: Forward recovery time versus dIF/dt (90% confidence). trr(ns) 200 180 160 140 IF=IF(av) VFR=1.1 x VF max. Tj=125C 20 15 120 100 10 80 60 5 40 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200 20 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25C 10 VR(V) 1 1 10 100 1000 4/5 STTH106 PACKAGE MECHANICAL DATA DO41 DIMENSIONS C A C OB / REF. Millimeters Min. Max. 5.20 2.71 Inches Min. 0.160 0.080 1.102 Max. 0.205 0.107 A B OD / OD / 4.07 2.04 28 0.712 C D 0.863 0.028 0.034 Ordering code STTH106 STTH106RL s Marking STTH106 STTH106 Package DO-41 DO-41 Weight 0.34 g 0.34 g Base qty 2000 5000 Delivery mode Ammopack Tape & reel Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2001 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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